Library Catalog
Chat requires JavaScript.
Request

Log in

To request this item, please log in.

Guests can retrieve items for in-building use only.

Text Email Print RefWorks
List (0)

Your List provides temporary storage and will be cleared after an hour of inactivity.

You can print, email, text, export, or request items from your List.

Advanced high voltage power device concepts
B. Jayant Baliga.
 
Location
   
Online
       
Hunt Library Call Number
  Faculty Publications (2nd floor) TK7881.15 .B353 2011 (Browse Shelf) Available (Library use only)
  Stacks (4th floor) TK7881.15 .B353 2011 (Browse Shelf) Checked Out, due 9/24/2016, 11:59 PM (Request item)

Log in

To request this item, please log in.

You must have an NCSU Libraries or NCSU Unity account to request this item.

       
Special Collections (D.H. Hill) Call Number
  Off-site Shelving TK7881.15 .B353 2011 (Browse Shelf) Available upon request (Library use only) (Request item)

Log in

To request this item, please log in.

Guests can retrieve items for in-building use only.

  Special Collections Reading Room TK7881.15 .B353 2011 (Browse Shelf) Available (Library use only)
Details
Other Authors
Description
  • ISBN: 9781461402688
  • ISBN: 1461402689
  • OCLC Number: 762058774
Notes
  • Includes bibliographical references and index.
Donors
  • William D. Moser, Jr. Library Endowment.
Table of Contents

Contents note continued: 10.4.4.Switching Energy Loss -- 10.4.5.Maximum Operating Frequency -- 10.5.Reverse-Biased Safe Operation Area -- 10.6.Conclusions -- References -- 11.Synopsis -- 11.1.5-kV Devices -- 11.1.1.On-State Voltage Drop -- 11.1.2.Power-Loss Trade-off Curves -- 11.1.3.Forward-Biased Safe Operating Area -- 11.1.4.Reverse-Biased Safe Operating Area -- 11.2.10-kV Devices -- 11.2.1.On-State Voltage Drop -- 11.2.2.Turn-Off Losses -- 11.2.3.Maximum Operating Frequency -- 11.3.Conclusions -- References.Contents note continued: 3.3.20-kV Silicon Carbide Thyristor -- 3.3.1.Blocking Characteristics -- 3.3.2.On-State Characteristics -- 3.4.Conclusions -- References -- 4.Silicon GTO -- 4.1.Basic Structure and Operation -- 4.2.5,000-V Silicon GTO -- 4.2.1.Blocking Characteristics -- 4.2.2.Leakage Current -- 4.2.3.On-State Voltage Drop -- 4.2.4.Turn-Off Characteristics -- 4.2.5.Lifetime Dependence -- 4.2.6.Switching Energy Loss -- 4.2.7.Maximum Operating Frequency -- 4.2.8.Turn-Off Gain -- 4.2.9.Buffer Layer Doping -- 4.2.10.Transparent Emitter Structure -- 4.3.10,000-V Silicon GTO -- 4.3.1.Blocking Characteristics -- 4.3.2.On-State Voltage Drop -- 4.3.3.Tum-Off Characteristics -- 4.3.4.Switching Energy Loss -- 4.3.5.Maximum Operating Frequency -- 4.3.6.Turn-Off Gain -- 4.4.Reverse-Biased Safe Operating Area -- 4.5.Conclusions -- References -- 5.Silicon IGBT (Insulated Gate Bipolar Transistor) -- 5.1.Basic Structure and Operation -- 5.2.5,000-V Silicon Trench-Gate IGBT --Contents note continued: 5.2.1.Blocking Characteristics -- 5.2.2.Leakage Current -- 5.2.3.On-State Voltage Drop -- 5.2.4.Turn-Off Characteristics -- 5.2.5.Lifetime Dependence -- 5.2.6.Switching Energy Loss -- 5.2.7.Maximum Operating Frequency -- 5.2.8.Buffer Layer Doping -- 5.2.9.Transparent Emitter Structure -- 5.3.5,000-V Silicon Planar-Gate IGBT -- 5.3.1.Blocking Characteristics -- 5.3.2.On-State Voltage Drop -- 5.3.3.Turn-Off Characteristics -- 5.3.4.Lifetime Dependence -- 5.3.5.Switching Energy Loss -- 5.3.6.Maximum Operating Frequency -- 5.4.10,000-V Silicon IGBT -- 5.4.1.Blocking Characteristics -- 5.4.2.On-State Voltage Drop -- 5.4.3.Turn-Off Characteristics -- 5.4.4.Switching Energy Loss -- 5.4.5.Maximum Operating Frequency -- 5.5.Forward Biased Safe Operation Area -- 5.6.Reverse Biased Safe Operation Area -- 5.7.Conclusions -- References -- 6.SiC Planar MOSFET Structures -- 6.1.Shielded Planar Inversion-Mode MOSFET Structure -- 6.2.Blocking Mode --Contents note continued: 6.3.Threshold Voltage -- 6.4.On-State Resistance -- 6.4.1.Channel-Resistance -- 6.4.2.Accumulation-Resistance -- 6.4.3.JFET-Resistance -- 6.4.4.Drift-Resistance -- 6.4.5.Total On-Resistance -- 6.5.Capacitances -- 6.6.Inductive Load Turn-Off Characteristics -- 6.7.5-kV Inversion-Mode MOSFET -- 6.7.1.Blocking Characteristics -- 6.7.2.On-Resistance -- 6.7.3.Device Capacitances -- 6.7.4.Inductive Load Turn-Off Characteristics -- 6.7.5.Switching Energy Loss -- 6.7.6.Maximum Operating Frequency -- 6.8.10-kV Inversion-Mode MOSFET -- 6.8.1.Blocking Characteristics -- 6.8.2.On-Resistance -- 6.8.3.Inductive Load Turn-Off Characteristics -- 6.8.4.Switching Energy Loss -- 6.8.5.Maximum Operating Frequency -- 6.9.20-kV Inversion-Mode MOSFET -- 6.9.1.Blocking Characteristics -- 6.9.2.On-Resistance -- 6.9.3.Inductive Load Turn-Off Characteristics -- 6.9.4.Switching Energy Loss -- 6.9.5.Maximum Operating Frequency -- 6.10.Conclusions -- References --Contents note continued: 7.Silicon Carbide IGBT -- 7.1.n-Channel Asymmetric Structure -- 7.1.1.Blocking Characteristics -- 7.1.2.On-State Voltage Drop -- 7.1.3.Turn-Off Characteristics -- 7.1.4.Lifetime Dependence -- 7.1.5.Switching Energy Loss -- 7.1.6.Maximum Operating Frequency -- 7.2.Optimized n-Channel Asymmetric Structure -- 7.2.1.Structure Optimization -- 7.2.2.Blocking Characteristics -- 7.2.3.On-State Voltage Drop -- 7.2.4.Turn-Off Characteristics -- 7.2.5.Lifetime Dependence -- 7.2.6.Switching Energy Loss -- 7.2.7.Maximum Operating Frequency -- 7.3.p-Channel Asymmetric Structure -- 7.3.1.Blocking Characteristics -- 7.3.2.On-State Voltage Drop -- 7.3.3.Turn-Off Characteristics -- 7.3.4.Lifetime Dependence -- 7.3.5.Switching Energy Loss -- 7.3.6.Maximum Operating Frequency -- 7.4.Conclusions -- References -- 8.Silicon MCT -- 8.1.Basic Structure and Operation -- 8.2.5,000-V Silicon MCT -- 8.2.1.Blocking Characteristics -- 8.2.2.On-State Voltage Drop --Contents note continued: 8.2.3.Turn-Off Characteristics -- 8.2.4.Lifetime Dependence -- 8.2.5.Switching Energy Loss -- 8.2.6.Maximum Operating Frequency -- 8.3.10,000-V Silicon MCT -- 8.3.1.Blocking Characteristics -- 8.3.2.On-State Voltage Drop -- 8.3.3.Turn-Off Characteristics -- 8.3.4.Switching Energy Loss -- 8.3.5.Maximum Operating Frequency -- 8.4.Forward-Biased Safe Operating Area -- 8.5.Reverse-Biased Safe Operating Area -- 8.6.Conclusions -- References -- 9.Silicon BRT -- 9.1.Basic Structure and Operation -- 9.2.5,000-V Silicon BRT -- 9.2.L Blocking Characteristics -- 9.2.2.On-State Voltage Drop -- 9.2.3.Turn-Off Characteristics -- 9.2.4.Lifetime Dependence -- 9.2.5.Switching Energy Loss -- 9.2.6.Maximum Operating Frequency -- 9.3.Alternate Structure and Operation -- 9.3.1.Blocking Characteristics -- 9.3.2.On-State Voltage Drop -- 9.3.3.Turn-Off Characteristics -- 9.4.10,000-V Silicon BRT -- 9.4.1.Blocking Characteristics -- 9.4.2.On-State Voltage Drop --Contents note continued: 9.4.3.Turn-Off Characteristics -- 9.4.4.Switching Energy Loss -- 9.4.5.Maximum Operating Frequency -- 9.5.Forward-Biased Safe Operating Area -- 9.6.Reverse-Biased Safe Operating Area -- 9.7.Conclusions -- References -- 10.Silicon EST -- 10.1.Basic Structure and Operation -- 10.2.5,000-V Silicon SC-EST -- 10.2.1.Blocking Characteristics -- 10.2.2.On-State Voltage Drop -- 10.2.3.Turn-Off Characteristics -- 10.2.4.Lifetime Dependence -- 10.2.5.Switching Energy Loss -- 10.2.6.Maximum Operating Frequency -- 10.2.7.Forward-Biased Safe Operating Area -- 10.3.5,000-V Silicon DC-EST -- 10.3.1.Blocking Characteristics -- 10.3.2.On-State Voltage Drop -- 10.3.3.Turn-Off Characteristics -- 10.3.4.Lifetime Dependence -- 10.3.5.Switching Energy Loss -- 10.3.6.Maximum Operating Frequency -- 10.3.7.Forward-Biased Safe Operating Area -- 10.4.10,000-V Silicon EST -- 10.4.1.Blocking Characteristics -- 10.4.2.On-State Voltage Drop -- 10.4.3.Turn-Off Characteristics --Machine generated contents note: 1.Introduction -- 1.1.Typical Power Switching Waveforms -- 1.2.Typical High Voltage Power Device Structures -- 1.3.Revised Breakdown Models for Silicon -- 1.4.Typical High Voltage Applications -- 1.4.1.Variable-Frequency Motor Drive -- 1.4.2.High Voltage Direct Current (HVDC) Power Transmission and Distribution -- 1.5.Conclusions -- References -- 2.Silicon Thyristors -- 2.1.Power Thyristor Structure and Operation -- 2.2.5,000-V Silicon Thyristor -- 2.2.1.Blocking Characteristics -- 2.2.2.On-State Characteristics -- 2.2.3.Turn-On -- 2.2.4.Reverse Recovery -- 2.2.5.Summary -- 2.3.10,000-V Silicon Thyristor -- 2.3.1.Blocking Characteristics -- 2.3.2.On-State Characteristics -- 2.3.3.Turn-On -- 2.3.4.Reverse Recovery -- 2.3.5.Summary -- 2.4.Conclusions -- References -- 3.Silicon Carbide Thyristors -- 3.1.SiC Thyristor Structure -- 3.2.20-kV Silicon Baseline Thyristor -- 3.2.1.Blocking Characteristics -- 3.2.2.On-State Characteristics --
History
Preview
MARC